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25LC128
Hotenda Part Number
H1799394
Manufacturer Part
EPC2103ENG
Manufacturer
EPC
Description
TRANS GAN 2N-CH 80V BUMPED DIE
Category
Discrete Semiconductor Products
Family
FET Arrays
Series
-
Manufacturer Quantity
10418
Datasheets Online
-
Price & Packaging & Delivery

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  • Delivery date: usually 2 to 7 working days.
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Datasheets
EPC2103 Preliminary Datasheet
Mfg Application Notes
Assembling eGaN® FETs
Die Attach Procedure
Die Removal Procedure
Product Training Modules
eGaN® Integrated GaN Power
Category
Discrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C
23A
Drain to Source Voltage (Vdss)
80V
FET Feature
GaNFET (Gallium Nitride)
FET Type
2 N-Channel (Half Bridge)
Family
Transistors - FETs, MOSFETs - Arrays
Gate Charge (Qg) @ Vgs
6.5nC @ 5V
Input Capacitance (Ciss) @ Vds
760pF @ 40V
Manufacturer
EPC
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 150°C (TJ)
Package / Case
Die
Packaging
Tray
Part Status
Active
Power - Max
-
Rds On (Max) @ Id, Vgs
5.5 mOhm @ 20A, 5V
Series
eGaN®
Supplier Device Package
Die
Vgs(th) (Max) @ Id
2.5V @ 7mA
Other Names
917-EPC2103ENG
EPC2103ENGRH7
Standard Package
10
Tags
EPC21 (8) EPC2 (60) EPC (198)

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