25LC128
Hotenda Part Number
H1800832
Manufacturer Part
SI7956DP-T1-E3
Manufacturer
Vishay/Siliconix
Description
MOSFET 2N-CH 150V 2.6A PPAK SO-8
Category
Discrete Semiconductor Products
Family
FET Arrays
Series
-
Manufacturer Quantity
1856
Datasheets Online
-
Price & Packaging & Delivery

Attention: The price is for reference only , pls send us RFQs for the update price.

Packaging: Regular packing reel, tube, tray, box and etc.

Delivery: Shipping can be arranged ASAP since payment received

Inquiry
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  • Please confirm with the logistics company in advance if you are in a remote area. (It may cost extra fees (35-50 USD) for delivery at those areas.)
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped. (Package Tracking) (It may take up to 24 hours before carriers display the info.)
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  • Cash transfer only. (Transfer with checks and bills are not accepted.)
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  • If you need the detailed invoice or tax ID, please email us.
Current - Continuous Drain (Id) @ 25°C
2.6A
Drain to Source Voltage (Vdss)
150V
FET Feature
Logic Level Gate
FET Type
2 N-Channel (Dual)
Gate Charge (Qg) @ Vgs
26nC @ 10V
Input Capacitance (Ciss) @ Vds
-
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8 Dual
Power - Max
1.4W
Rds On (Max) @ Id, Vgs
105 mOhm @ 4.1A, 10V
Supplier Device Package
PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id
4V @ 250µA

Related Product

SI7956DP-T1-E3
MOSFET 2N-CH 150V 2.6A PPAK SO-8
SI7956DP-T1-E3
MOSFET 2N-CH 150V 2.6A PPAK SO-8
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