IPB050N06N G

Hotenda Part Number: H1842412

Manufacturer Part: IPB050N06N G

Manufacturer: Infineon Technologies

Description: MOSFET N-CH 60V 100A TO-263

Category: Discrete Semiconductor Products

Family: Single FETs

Series: -

Manufacturer Quantity: 3436

Datasheets Online: -

Price & Packaging & Delivery

Attention: The price is for reference only , pls send us RFQs for the update price.

Packaging: Regular packing reel, tube, tray, box and etc.

Delivery: Shipping can be arranged ASAP since payment received

IPB050N06N G Notice

we specialize in Infineon Technologies IPB050N06N G electronic components. IPB050N06N G can be shipped within 24 hours after order. If you have any demands for IPB050N06N G, Please submit a Request for Quotation here or send us an email.

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Delivery time: At the same day (Order deadline is 2pm, HK Time).
Delivery date: usually 2 to 7 working days.
It is unable to appoint a date of delivery.
Tracking number will be sent once your order has been shipped. (Package Tracking) （It may take up to 24 hours before carriers display the info.）

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If you need the detailed invoice or tax ID, please email us.

Attributes

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drain to Source Voltage (Vdss)

60V

FET Feature

Standard

FET Type

MOSFET N-Channel, Metal Oxide

Gate Charge (Qg) @ Vgs

167nC @ 10V

Input Capacitance (Ciss) @ Vds

6100pF @ 30V

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Power - Max

300W

Rds On (Max) @ Id, Vgs

4.7 mOhm @ 100A, 10V

Supplier Device Package

PG-TO263-2

Vgs(th) (Max) @ Id

4V @ 270µA

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