IPB085N06L G

Hotenda Part Number: H1842417

Manufacturer Part: IPB085N06L G

Manufacturer: Infineon Technologies

Description: MOSFET N-CH 60V 80A TO-263

Category: Discrete Semiconductor Products

Family: Single FETs

Series: -

Manufacturer Quantity: 3441

Datasheets Online: -

Price & Packaging & Delivery

Attention: The price is for reference only , pls send us RFQs for the update price.

Packaging: Regular packing reel, tube, tray, box and etc.

Delivery: Shipping can be arranged ASAP since payment received

IPB085N06L G Notice

we specialize in Infineon Technologies IPB085N06L G electronic components. IPB085N06L G can be shipped within 24 hours after order. If you have any demands for IPB085N06L G, Please submit a Request for Quotation here or send us an email.

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Delivery time: At the same day (Order deadline is 2pm, HK Time).
Delivery date: usually 2 to 7 working days.
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Attributes

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drain to Source Voltage (Vdss)

60V

FET Feature

Logic Level Gate

FET Type

MOSFET N-Channel, Metal Oxide

Gate Charge (Qg) @ Vgs

104nC @ 10V

Input Capacitance (Ciss) @ Vds

3500pF @ 30V

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Power - Max

188W

Rds On (Max) @ Id, Vgs

8.2 mOhm @ 80A, 10V

Supplier Device Package

PG-TO263-3

Vgs(th) (Max) @ Id

2V @ 125µA

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