IPB65R190C6

Hotenda Part Number: H1832748

Manufacturer Part: IPB65R190C6

Manufacturer: Infineon Technologies

Description: MOSFET N-CH 650V 20.2A TO263

Category: Discrete Semiconductor Products

Family: Single FETs

Series: -

Manufacturer Quantity: 3772

Datasheets Online: -

Price & Packaging & Delivery

Attention: The price is for reference only , pls send us RFQs for the update price.

Packaging: Regular packing reel, tube, tray, box and etc.

Delivery: Shipping can be arranged ASAP since payment received

IPB65R190C6 Notice

we specialize in Infineon Technologies IPB65R190C6 electronic components. IPB65R190C6 can be shipped within 24 hours after order. If you have any demands for IPB65R190C6, Please submit a Request for Quotation here or send us an email.

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Delivery time: At the same day (Order deadline is 2pm, HK Time).
Delivery date: usually 2 to 7 working days.
It is unable to appoint a date of delivery.
Tracking number will be sent once your order has been shipped. (Package Tracking) （It may take up to 24 hours before carriers display the info.）

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Customer is responsible for paying all possible charges, including sales tax, VAT and customs charges,etc.
If you need the detailed invoice or tax ID, please email us.

Attributes

Current - Continuous Drain (Id) @ 25°C

20.2A (Tc)

Drain to Source Voltage (Vdss)

650V

FET Feature

Standard

FET Type

MOSFET N-Channel, Metal Oxide

Gate Charge (Qg) @ Vgs

73nC @ 10V

Input Capacitance (Ciss) @ Vds

1620pF @ 100V

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Power - Max

151W

Rds On (Max) @ Id, Vgs

190 mOhm @ 7.3A, 10V

Supplier Device Package

PG-TO263

Vgs(th) (Max) @ Id

3.5V @ 730µA

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IPB65R190C6