IPD65R1K4CFDBTMA1

Hotenda Part Number: H1821912

Manufacturer Part: IPD65R1K4CFDBTMA1

Manufacturer: Infineon Technologies

Description: MOSFET N-CH 650V 2.8A TO-252

Category: Discrete Semiconductor Products

Family: Single FETs

Series: -

Manufacturer Quantity: 2936

Datasheets Online: -

Price & Packaging & Delivery

Quantity
Unit Price
Ext. Price

1: $0.97; $0.97

10: $0.09; $0.87

100: $0.01; $0.68

500: $0.00; $0.56

1,000: $0.44; $0.44

Attention: The price is for reference only , pls send us RFQs for the update price.

Packaging: Regular packing reel, tube, tray, box and etc.

Delivery: Shipping can be arranged ASAP since payment received

IPD65R1K4CFDBTMA1 Notice

we specialize in Infineon Technologies IPD65R1K4CFDBTMA1 electronic components. IPD65R1K4CFDBTMA1 can be shipped within 24 hours after order. If you have any demands for IPD65R1K4CFDBTMA1, Please submit a Request for Quotation here or send us an email.

Inquiry

Shipping
Payment

FedEx, DHL, and UPS can be selected.
You can select whether to charge shipping fee by your shipping account or to charge by our side.
Please confirm with the logistics company in advance if you are in a remote area. （It may cost extra fees (35-50 USD) for delivery at those areas.）
The shopping cart will automatically calculate the shipping cost.
Delivery time: At the same day (Order deadline is 2pm, HK Time).
Delivery date: usually 2 to 7 working days.
It is unable to appoint a date of delivery.
Tracking number will be sent once your order has been shipped. (Package Tracking) （It may take up to 24 hours before carriers display the info.）

PayPal, Credit Card, TT in advance (bank transfer), Western Union can be chosen.
Cash transfer only. (Transfer with checks and bills are not accepted.)
Customer is responsible for paying all possible charges, including sales tax, VAT and customs charges,etc.
If you need the detailed invoice or tax ID, please email us.

Attributes

Current - Continuous Drain (Id) @ 25°C

2.8A (Tc)

Drain to Source Voltage (Vdss)

650V

FET Feature

Standard

FET Type

MOSFET N-Channel, Metal Oxide

Gate Charge (Qg) @ Vgs

10nC @ 10V

Input Capacitance (Ciss) @ Vds

262pF @ 100V

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Power - Max

28.4W

Rds On (Max) @ Id, Vgs

1.4 Ohm @ 1A, 10V

Supplier Device Package

PG-TO252-3

Vgs(th) (Max) @ Id

4.5V @ 100µA

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IPD65R1K4CFDBTMA1