25LC128
Hotenda Part Number
H1832851
Manufacturer Part
IPI024N06N3 G
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 60V 120A TO262-3
Category
Discrete Semiconductor Products
Family
Single FETs
Series
-
Manufacturer Quantity
3875
Datasheets Online
-
Price & Packaging & Delivery

Attention: The price is for reference only , pls send us RFQs for the update price.

Packaging: Regular packing reel, tube, tray, box and etc.

Delivery: Shipping can be arranged ASAP since payment received

Inquiry
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
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Datasheets
IPx021,24N06N3 G
PCN Design/Specification
CoolMOS/OptiMOS Halogen Free 10/Dec/2008
PCN Obsolescence/ EOL
Mult Dev EOL 20/Oct/2015
Category
Discrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drain to Source Voltage (Vdss)
60V
FET Feature
Standard
FET Type
MOSFET N-Channel, Metal Oxide
Family
Transistors - FETs, MOSFETs - Single
Gate Charge (Qg) @ Vgs
275nC @ 10V
Input Capacitance (Ciss) @ Vds
23000pF @ 30V
Manufacturer
Infineon Technologies
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging
Tube
Part Status
Obsolete
Power - Max
250W
Rds On (Max) @ Id, Vgs
2.4 mOhm @ 100A, 10V
Series
OptiMOS™
Supplier Device Package
PG-TO262-3
Vgs(th) (Max) @ Id
4V @ 196µA
Other Names
IPI024N06N3 G
IPI024N06N3 G-ND
SP000451486
Standard Package
500
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