SI2309DS-T1-E3

Hotenda Part Number: H1834354

Manufacturer Part: SI2309DS-T1-E3

Manufacturer: Vishay/Siliconix

Description: MOSFET P-CH 60V 1.25A SOT23-3

Category: Discrete Semiconductor Products

Family: Single FETs

Series: -

Manufacturer Quantity: 5378

Datasheets Online: -

Price & Packaging & Delivery

Attention: The price is for reference only , pls send us RFQs for the update price.

Packaging: Regular packing reel, tube, tray, box and etc.

Delivery: Shipping can be arranged ASAP since payment received

SI2309DS-T1-E3 Notice

we specialize in Vishay/Siliconix SI2309DS-T1-E3 electronic components. SI2309DS-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI2309DS-T1-E3, Please submit a Request for Quotation here or send us an email.

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Payment

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Delivery time: At the same day (Order deadline is 2pm, HK Time).
Delivery date: usually 2 to 7 working days.
It is unable to appoint a date of delivery.
Tracking number will be sent once your order has been shipped. (Package Tracking) （It may take up to 24 hours before carriers display the info.）

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If you need the detailed invoice or tax ID, please email us.

Attributes

Current - Continuous Drain (Id) @ 25°C

Drain to Source Voltage (Vdss)

60V

FET Feature

Logic Level Gate

FET Type

MOSFET P-Channel, Metal Oxide

Gate Charge (Qg) @ Vgs

12nC @ 10V

Input Capacitance (Ciss) @ Vds

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Power - Max

1.25W

Rds On (Max) @ Id, Vgs

340 mOhm @ 1.25A, 10V

Supplier Device Package

SOT-23-3 (TO-236)

Vgs(th) (Max) @ Id

1V @ 250µA (Min)

Related Product

SI2309DS-T1-E3