TJ11A10M3,S5Q(M - Toshiba Semiconductor & Storage - Discrete Semiconductor Products - IN STOCK

Hotenda Part Number: H1827442

Manufacturer Part: TJ11A10M3,S5Q(M

Manufacturer: Toshiba Semiconductor & Storage

Description: MOSFET P-CH 100V 11A TO220SIS-3

Category: Discrete Semiconductor Products

Family: Single FETs

Series: -

Manufacturer Quantity: 8466

Datasheets Online: -

Price & Packaging & Delivery

Quantity
Unit Price
Ext. Price

50: $0.02; $0.88

Attention: The price is for reference only , pls send us RFQs for the update price.

Packaging: Regular packing reel, tube, tray, box and etc.

Delivery: Shipping can be arranged ASAP since payment received

TJ11A10M3,S5Q(M Notice

we specialize in Toshiba Semiconductor & Storage TJ11A10M3,S5Q(M electronic components. TJ11A10M3,S5Q(M can be shipped within 24 hours after order. If you have any demands for TJ11A10M3,S5Q(M, Please submit a Request for Quotation here or send us an email.

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Shipping
Payment

FedEx, DHL, and UPS can be selected.
You can select whether to charge shipping fee by your shipping account or to charge by our side.
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Delivery time: At the same day (Order deadline is 2pm, HK Time).
Delivery date: usually 2 to 7 working days.
It is unable to appoint a date of delivery.
Tracking number will be sent once your order has been shipped. (Package Tracking) （It may take up to 24 hours before carriers display the info.）

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Cash transfer only. (Transfer with checks and bills are not accepted.)
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If you need the detailed invoice or tax ID, please email us.

Attributes

Current - Continuous Drain (Id) @ 25°C

11A (Ta)

Drain to Source Voltage (Vdss)

100V

FET Feature

Standard

FET Type

MOSFET P-Channel, Metal Oxide

Gate Charge (Qg) @ Vgs

69nC @ 10V

Input Capacitance (Ciss) @ Vds

3200pF @ 10V

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Power - Max

24W

Rds On (Max) @ Id, Vgs

130 mOhm @ 5.5A, 10V

Supplier Device Package

TO-220SIS

Vgs(th) (Max) @ Id

4V @ 1mA