TK10A60D(Q,M) - Toshiba Semiconductor & Storage - Discrete Semiconductor Products - IN STOCK

Hotenda Part Number: H1828264

Manufacturer Part: TK10A60D(Q,M)

Manufacturer: Toshiba Semiconductor & Storage

Description: MOSFET N-CH 600V 10A TO220SIS

Category: Discrete Semiconductor Products

Family: Single FETs

Series: -

Manufacturer Quantity: 9288

Datasheets Online: -

Price & Packaging & Delivery

Quantity
Unit Price
Ext. Price

50: $0.05; $2.40

Attention: The price is for reference only , pls send us RFQs for the update price.

Packaging: Regular packing reel, tube, tray, box and etc.

Delivery: Shipping can be arranged ASAP since payment received

TK10A60D(Q,M) Notice

we specialize in Toshiba Semiconductor & Storage TK10A60D(Q,M) electronic components. TK10A60D(Q,M) can be shipped within 24 hours after order. If you have any demands for TK10A60D(Q,M), Please submit a Request for Quotation here or send us an email.

Inquiry

Shipping
Payment

FedEx, DHL, and UPS can be selected.
You can select whether to charge shipping fee by your shipping account or to charge by our side.
Please confirm with the logistics company in advance if you are in a remote area. （It may cost extra fees (35-50 USD) for delivery at those areas.）
The shopping cart will automatically calculate the shipping cost.
Delivery time: At the same day (Order deadline is 2pm, HK Time).
Delivery date: usually 2 to 7 working days.
It is unable to appoint a date of delivery.
Tracking number will be sent once your order has been shipped. (Package Tracking) （It may take up to 24 hours before carriers display the info.）

PayPal, Credit Card, TT in advance (bank transfer), Western Union can be chosen.
Cash transfer only. (Transfer with checks and bills are not accepted.)
Customer is responsible for paying all possible charges, including sales tax, VAT and customs charges,etc.
If you need the detailed invoice or tax ID, please email us.

Attributes

Current - Continuous Drain (Id) @ 25°C

10A (Ta)

Drain to Source Voltage (Vdss)

600V

FET Feature

Standard

FET Type

MOSFET N-Channel, Metal Oxide

Gate Charge (Qg) @ Vgs

25nC @ 10V

Input Capacitance (Ciss) @ Vds

1350pF @ 25V

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Power - Max

45W

Rds On (Max) @ Id, Vgs

750 mOhm @ 5A, 10V

Supplier Device Package

TO-220SIS

Vgs(th) (Max) @ Id

4V @ 1mA