25LC128
Hotenda Part Number
H1892479
Manufacturer Part
2SK3320-BL(TE85L,F
Manufacturer
Toshiba Semiconductor & Storage
Description
JFET DUAL N-CH USV
Category
Discrete Semiconductor Products
Family
JFETs (Junction Field Effect)
Series
-
Manufacturer Quantity
3503
Datasheets Online
-
Price & Packaging & Delivery
Quantity
Unit Price
Ext. Price
1
$0.79
$0.79
10
$0.07
$0.69
25
$0.02
$0.61
100
$0.01
$0.53
250
$0.00
$0.46
500
$0.00
$0.39
1,000
$0.32
$0.32

Attention: The price is for reference only , pls send us RFQs for the update price.

Packaging: Regular packing reel, tube, tray, box and etc.

Delivery: Shipping can be arranged ASAP since payment received

Inquiry
  • FedEx, DHL, and UPS can be selected.
  • You can select whether to charge shipping fee by your shipping account or to charge by our side.
  • Please confirm with the logistics company in advance if you are in a remote area. (It may cost extra fees (35-50 USD) for delivery at those areas.)
  • The shopping cart will automatically calculate the shipping cost.
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped. (Package Tracking) (It may take up to 24 hours before carriers display the info.)
  • PayPal, Credit Card, TT in advance (bank transfer), Western Union can be chosen.
  • Cash transfer only. (Transfer with checks and bills are not accepted.)
  • Customer is responsible for paying all possible charges, including sales tax, VAT and customs charges,etc.
  • If you need the detailed invoice or tax ID, please email us.
Current - Drain (Idss) @ Vds (Vgs=0)
6mA @ 10V
Current Drain (Id) - Max
-
Drain to Source Voltage (Vdss)
-
FET Type
N-Channel
Input Capacitance (Ciss) @ Vds
13pF @ 10V
Mounting Type
Surface Mount
Package / Case
5-TSSOP, SC-70-5, SOT-353
Power - Max
200mW
Resistance - RDS(On)
-
Supplier Device Package
USV
Voltage - Breakdown (V(BR)GSS)
-
Voltage - Cutoff (VGS off) @ Id
200mV @ 100nA

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