RN1905,LF(CT

Hotenda Part Number: H2043453

Manufacturer Part: RN1905,LF(CT

Manufacturer: Toshiba Semiconductor & Storage

Description: TRANS 2NPN PREBIAS 0.2W US6

Category: Discrete Semiconductor Products

Family: Pre-Biased BJT Transistor Arrays

Series: -

Manufacturer Quantity: 4477

Datasheets Online: -

Price & Packaging & Delivery

Quantity
Unit Price
Ext. Price

1: $0.30; $0.30

10: $0.03; $0.27

25: $0.01; $0.19

100: $0.00; $0.15

250: $0.00; $0.10

500: $0.00; $0.08

1,000: $0.06; $0.06

Attention: The price is for reference only , pls send us RFQs for the update price.

Packaging: Regular packing reel, tube, tray, box and etc.

Delivery: Shipping can be arranged ASAP since payment received

RN1905,LF(CT Notice

we specialize in Toshiba Semiconductor & Storage RN1905,LF(CT electronic components. RN1905,LF(CT can be shipped within 24 hours after order. If you have any demands for RN1905,LF(CT, Please submit a Request for Quotation here or send us an email.

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Shipping
Payment

FedEx, DHL, and UPS can be selected.
You can select whether to charge shipping fee by your shipping account or to charge by our side.
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Delivery time: At the same day (Order deadline is 2pm, HK Time).
Delivery date: usually 2 to 7 working days.
It is unable to appoint a date of delivery.
Tracking number will be sent once your order has been shipped. (Package Tracking) （It may take up to 24 hours before carriers display the info.）

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Cash transfer only. (Transfer with checks and bills are not accepted.)
Customer is responsible for paying all possible charges, including sales tax, VAT and customs charges,etc.
If you need the detailed invoice or tax ID, please email us.

Attributes

Current - Collector (Ic) (Max)

100mA

Current - Collector Cutoff (Max)

500nA

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 10mA, 5V

Frequency - Transition

250MHz

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Power - Max

200mW

Resistor - Base (R1) (Ohms)

2.2k

Resistor - Emitter Base (R2) (Ohms)

47k

Supplier Device Package

US6

Transistor Type

2 NPN - Pre-Biased (Dual)

Vce Saturation (Max) @ Ib, Ic

300mV @ 250µA, 5mA

Voltage - Collector Emitter Breakdown (Max)

50V

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RN1905,LF(CT