RN1907,LF

Hotenda Part Number: H2043742

Manufacturer Part: RN1907,LF

Manufacturer: Toshiba Semiconductor & Storage

Description: TRANS 2NPN PREBIAS 0.2W US6

Category: Discrete Semiconductor Products

Family: Pre-Biased BJT Transistor Arrays

Series: -

Manufacturer Quantity: 4766

Datasheets Online: -

Price & Packaging & Delivery

Quantity
Unit Price
Ext. Price

1: $0.30; $0.30

10: $0.03; $0.27

25: $0.01; $0.19

100: $0.00; $0.15

250: $0.00; $0.10

500: $0.00; $0.08

1,000: $0.06; $0.06

Attention: The price is for reference only , pls send us RFQs for the update price.

Packaging: Regular packing reel, tube, tray, box and etc.

Delivery: Shipping can be arranged ASAP since payment received

RN1907,LF Notice

we specialize in Toshiba Semiconductor & Storage RN1907,LF electronic components. RN1907,LF can be shipped within 24 hours after order. If you have any demands for RN1907,LF, Please submit a Request for Quotation here or send us an email.

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Payment

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Delivery time: At the same day (Order deadline is 2pm, HK Time).
Delivery date: usually 2 to 7 working days.
It is unable to appoint a date of delivery.
Tracking number will be sent once your order has been shipped. (Package Tracking) （It may take up to 24 hours before carriers display the info.）

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If you need the detailed invoice or tax ID, please email us.

Attributes

Current - Collector (Ic) (Max)

100mA

Current - Collector Cutoff (Max)

500nA

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 10mA, 5V

Frequency - Transition

250MHz

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Power - Max

200mW

Resistor - Base (R1) (Ohms)

10k

Resistor - Emitter Base (R2) (Ohms)

47k

Supplier Device Package

US6

Transistor Type

2 NPN - Pre-Biased (Dual)

Vce Saturation (Max) @ Ib, Ic

300mV @ 250µA, 5mA

Voltage - Collector Emitter Breakdown (Max)

50V

Related Product

RN1907,LF