RN1105,LF(CT

Hotenda Part Number: H1897832

Manufacturer Part: RN1105,LF(CT

Manufacturer: Toshiba Semiconductor & Storage

Description: TRANS PREBIAS NPN 50V 0.1W SSM

Category: Discrete Semiconductor Products

Family: Pre-Biased BJT Transistors

Series: -

Manufacturer Quantity: 8856

Datasheets Online: -

Price & Packaging & Delivery

Quantity
Unit Price
Ext. Price

1: $0.28; $0.28

10: $0.03; $0.26

25: $0.01; $0.19

100: $0.00; $0.14

250: $0.00; $0.09

500: $0.00; $0.08

1,000: $0.05; $0.05

Attention: The price is for reference only , pls send us RFQs for the update price.

Packaging: Regular packing reel, tube, tray, box and etc.

Delivery: Shipping can be arranged ASAP since payment received

RN1105,LF(CT Notice

we specialize in Toshiba Semiconductor & Storage RN1105,LF(CT electronic components. RN1105,LF(CT can be shipped within 24 hours after order. If you have any demands for RN1105,LF(CT, Please submit a Request for Quotation here or send us an email.

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Shipping
Payment

FedEx, DHL, and UPS can be selected.
You can select whether to charge shipping fee by your shipping account or to charge by our side.
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Delivery time: At the same day (Order deadline is 2pm, HK Time).
Delivery date: usually 2 to 7 working days.
It is unable to appoint a date of delivery.
Tracking number will be sent once your order has been shipped. (Package Tracking) （It may take up to 24 hours before carriers display the info.）

PayPal, Credit Card, TT in advance (bank transfer), Western Union can be chosen.
Cash transfer only. (Transfer with checks and bills are not accepted.)
Customer is responsible for paying all possible charges, including sales tax, VAT and customs charges,etc.
If you need the detailed invoice or tax ID, please email us.

Attributes

Current - Collector (Ic) (Max)

100mA

Current - Collector Cutoff (Max)

500nA

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 10mA, 5V

Frequency - Transition

250MHz

Mounting Type

Surface Mount

Package / Case

SC-75, SOT-416

Power - Max

100mW

Resistor - Base (R1) (Ohms)

2.2k

Resistor - Emitter Base (R2) (Ohms)

47k

Supplier Device Package

SSM

Transistor Type

NPN - Pre-Biased

Vce Saturation (Max) @ Ib, Ic

300mV @ 250µA, 5mA

Voltage - Collector Emitter Breakdown (Max)

50V

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RN1105,LF(CT