RN1105(T5L,F,T)

Hotenda Part Number: H1899204

Manufacturer Part: RN1105(T5L,F,T)

Manufacturer: Toshiba Semiconductor & Storage

Description: TRANS PREBIAS NPN 0.1W SSM

Category: Discrete Semiconductor Products

Family: Pre-Biased BJT Transistors

Series: -

Manufacturer Quantity: 10228

Datasheets Online: -

Price & Packaging & Delivery

Attention: The price is for reference only , pls send us RFQs for the update price.

Packaging: Regular packing reel, tube, tray, box and etc.

Delivery: Shipping can be arranged ASAP since payment received

RN1105(T5L,F,T) Notice

we specialize in Toshiba Semiconductor & Storage RN1105(T5L,F,T) electronic components. RN1105(T5L,F,T) can be shipped within 24 hours after order. If you have any demands for RN1105(T5L,F,T), Please submit a Request for Quotation here or send us an email.

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Delivery time: At the same day (Order deadline is 2pm, HK Time).
Delivery date: usually 2 to 7 working days.
It is unable to appoint a date of delivery.
Tracking number will be sent once your order has been shipped. (Package Tracking) （It may take up to 24 hours before carriers display the info.）

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Cash transfer only. (Transfer with checks and bills are not accepted.)
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If you need the detailed invoice or tax ID, please email us.

Attributes

Current - Collector (Ic) (Max)

100mA

Current - Collector Cutoff (Max)

500nA

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 10mA, 5V

Frequency - Transition

250MHz

Mounting Type

Surface Mount

Package / Case

SC-75, SOT-416

Power - Max

100mW

Resistor - Base (R1) (Ohms)

2.2k

Resistor - Emitter Base (R2) (Ohms)

47k

Supplier Device Package

SSM

Transistor Type

NPN - Pre-Biased

Vce Saturation (Max) @ Ib, Ic

300mV @ 250µA, 5mA

Voltage - Collector Emitter Breakdown (Max)

50V

Related Product

RN1105(T5L,F,T)