RN2117MFV(TPL3) - Toshiba Semiconductor & Storage - Discrete Semiconductor Products - IN STOCK

Hotenda Part Number: H1897957

Manufacturer Part: RN2117MFV(TPL3)

Manufacturer: Toshiba Semiconductor & Storage

Description: TRANS PREBIAS PNP 150MW VESM

Category: Discrete Semiconductor Products

Family: Pre-Biased BJT Transistors

Series: -

Manufacturer Quantity: 8981

Datasheets Online: -

Price & Packaging & Delivery

Quantity
Unit Price
Ext. Price

8,000: $0.00; $0.04

Attention: The price is for reference only , pls send us RFQs for the update price.

Packaging: Regular packing reel, tube, tray, box and etc.

Delivery: Shipping can be arranged ASAP since payment received

RN2117MFV(TPL3) Notice

we specialize in Toshiba Semiconductor & Storage RN2117MFV(TPL3) electronic components. RN2117MFV(TPL3) can be shipped within 24 hours after order. If you have any demands for RN2117MFV(TPL3), Please submit a Request for Quotation here or send us an email.

Inquiry

Shipping
Payment

FedEx, DHL, and UPS can be selected.
You can select whether to charge shipping fee by your shipping account or to charge by our side.
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Delivery time: At the same day (Order deadline is 2pm, HK Time).
Delivery date: usually 2 to 7 working days.
It is unable to appoint a date of delivery.
Tracking number will be sent once your order has been shipped. (Package Tracking) （It may take up to 24 hours before carriers display the info.）

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Cash transfer only. (Transfer with checks and bills are not accepted.)
Customer is responsible for paying all possible charges, including sales tax, VAT and customs charges,etc.
If you need the detailed invoice or tax ID, please email us.

Attributes

Current - Collector (Ic) (Max)

100mA

Current - Collector Cutoff (Max)

500nA

DC Current Gain (hFE) (Min) @ Ic, Vce

30 @ 10mA, 5V

Frequency - Transition

Mounting Type

Surface Mount

Package / Case

SOT-723

Power - Max

150mW

Resistor - Base (R1) (Ohms)

10k

Resistor - Emitter Base (R2) (Ohms)

4.7k

Supplier Device Package

VESM

Transistor Type

PNP - Pre-Biased

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 5mA

Voltage - Collector Emitter Breakdown (Max)

50V