HN1B04FU-GR,LF - Toshiba Semiconductor & Storage - Discrete Semiconductor Products - IN STOCK

Hotenda Part Number: H2038625

Manufacturer Part: HN1B04FU-GR,LF

Manufacturer: Toshiba Semiconductor & Storage

Description: TRANS NPN/PNP 50V 0.15A US6

Category: Discrete Semiconductor Products

Family: BJT Transistor Arrays

Series: -

Manufacturer Quantity: 9649

Datasheets Online: -

Price & Packaging & Delivery

Quantity
Unit Price
Ext. Price

3,000: $0.02; $0.06

Attention: The price is for reference only , pls send us RFQs for the update price.

Packaging: Regular packing reel, tube, tray, box and etc.

Delivery: Shipping can be arranged ASAP since payment received

HN1B04FU-GR,LF Notice

we specialize in Toshiba Semiconductor & Storage HN1B04FU-GR,LF electronic components. HN1B04FU-GR,LF can be shipped within 24 hours after order. If you have any demands for HN1B04FU-GR,LF, Please submit a Request for Quotation here or send us an email.

Inquiry

Shipping
Payment

FedEx, DHL, and UPS can be selected.
You can select whether to charge shipping fee by your shipping account or to charge by our side.
Please confirm with the logistics company in advance if you are in a remote area. （It may cost extra fees (35-50 USD) for delivery at those areas.）
The shopping cart will automatically calculate the shipping cost.
Delivery time: At the same day (Order deadline is 2pm, HK Time).
Delivery date: usually 2 to 7 working days.
It is unable to appoint a date of delivery.
Tracking number will be sent once your order has been shipped. (Package Tracking) （It may take up to 24 hours before carriers display the info.）

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If you need the detailed invoice or tax ID, please email us.

Attributes

Current - Collector (Ic) (Max)

150mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

200 @ 2mA, 6V

Frequency - Transition

150MHz, 120MHz

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Power - Max

200mW

Supplier Device Package

US6

Transistor Type

NPN, PNP

Vce Saturation (Max) @ Ib, Ic

250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA

Voltage - Collector Emitter Breakdown (Max)

50V

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