HN3C51F-GR(TE85L,F

Hotenda Part Number: H2037797

Manufacturer Part: HN3C51F-GR(TE85L,F

Manufacturer: Toshiba Semiconductor & Storage

Description: TRANS 2NPN 120V 0.1A SM6

Category: Discrete Semiconductor Products

Family: BJT Transistor Arrays

Series: -

Manufacturer Quantity: 8821

Datasheets Online: -

Price & Packaging & Delivery

Attention: The price is for reference only , pls send us RFQs for the update price.

Packaging: Regular packing reel, tube, tray, box and etc.

Delivery: Shipping can be arranged ASAP since payment received

HN3C51F-GR(TE85L,F Notice

we specialize in Toshiba Semiconductor & Storage HN3C51F-GR(TE85L,F electronic components. HN3C51F-GR(TE85L,F can be shipped within 24 hours after order. If you have any demands for HN3C51F-GR(TE85L,F, Please submit a Request for Quotation here or send us an email.

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Payment

FedEx, DHL, and UPS can be selected.
You can select whether to charge shipping fee by your shipping account or to charge by our side.
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The shopping cart will automatically calculate the shipping cost.
Delivery time: At the same day (Order deadline is 2pm, HK Time).
Delivery date: usually 2 to 7 working days.
It is unable to appoint a date of delivery.
Tracking number will be sent once your order has been shipped. (Package Tracking) （It may take up to 24 hours before carriers display the info.）

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Cash transfer only. (Transfer with checks and bills are not accepted.)
Customer is responsible for paying all possible charges, including sales tax, VAT and customs charges,etc.
If you need the detailed invoice or tax ID, please email us.

Attributes

Current - Collector (Ic) (Max)

100mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

200 @ 2mA, 6V

Frequency - Transition

100MHz

Mounting Type

Surface Mount

Package / Case

SC-74, SOT-457

Power - Max

300mW

Supplier Device Package

SM6

Transistor Type

2 NPN (Dual)

Vce Saturation (Max) @ Ib, Ic

300mV @ 1mA, 10mA

Voltage - Collector Emitter Breakdown (Max)

120V

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